Silicon carbide (SiC) MOSFET is a kind of high speed, high efficiency, low power semiconductor device, widely used in high voltage, high temperature, high power electronics field. Compared with traditional Si mosFeTs, SiC MosFeTs have higher breakdown field strength, better resistance to high pressure, and higher switching speed, while having better high-temperature stability and lower turn-off loss.

In terms of manufacturing, the production process of SiC MosFETs is more complex than that of Si MosFETs, requiring higher quality control and finer process control. At present, the major manufacturers include Infineon, stmicroelectronics, Fairchild Semiconductor, ST and Toshiba.

In application, SiC MosFETs have higher service life and better performance under high pressure and high temperature conditions, so they are widely used in power electronics, automotive, industrial and aerospace fields. For example, in the field of power electronics, SiC mosFeTs are used to drive motors, transformers, power transmission systems, etc. In the automotive field, SiC MOSFET is used in braking system, engine control system, etc. In the industrial field, SiC MosFETs are used in manipulator control systems, welding machines, etc. In the aerospace field, SiC MosFETs are used in satellite power systems, etc.

In short, SiC MOS, as an efficient and low-power semiconductor device, has excellent characteristics such as high breakdown field strength and low turn-off loss, and has a wide range of application prospects in the field of high voltage, high temperature and high power power electronics. With the continuous development of technology and the continuous expansion of application fields, SiC MOS will be applied in more occasions, bringing more convenience and benefits to people.