ABOUT US

ABOUT US

2011 years
Head office established
2.5 billion
Total assets
30 strip
SOT/TO production line
100 million
Annual output of various devices
GUANGDONG INMARK ELECTRONICS  CO. LTD

GUANGDONG INMARK ELECTRONICS CO. LTD

Renmao Electronics was founded in 2011 and settled in Shenzhen, a key enterprise in Baoan District in 2016. Is a well-known domestic semiconductor packaging and testing high-tech enterprises, committed to providing high-quality semiconductor components for the global electronics manufacturing enterprises. Relying on the strong industrial foundation, combined with the industrial advantages of the semiconductor closed test industry, it takes the lead in deploying the third generation of nitride semiconductor materials to help the 5G era. At the same time, adhere to independent research and development and manufacturing, solve the bottleneck technology, break foreign technical barriers, boost the localization of silicon carbide automotive chips.

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NEWS

NEWS

Academician Wang Xujin visited Renmao Electronics to help accelerate the global strategic layout of "MOT"

In recent years, China's IC industry has been developing rapidly, and its market scale and technical level are constantly improving. With the rapid rise of emerging industries represented by artificial intelligence, intelligent manufacturing, automotive electronics, Internet of Things and 5G, integrated circuit has become the core of China's information technology development. In 2020, a sudden epidemic swept the world. Global semiconductor supply shortage, import from foreign countries is no longer the first choice, chip "localization" trend is inevitable. During that time, China's homegrown semiconductor makers, such as Guangdong Renmao Electronics, have been on the rise.

2023-04-20

gallium nitride

Gallium nitride is an inorganic. The chemical formula GaN is a compound of nitrogen and gallium. It is a direct bandgap semiconductor and has been commonly used in light-emitting diodes since 1990. This compound is similar in structure to wurtzite and has high hardness. With a wide band gap of 3.4 electron volts, gallium nitride can be used in high power, high speed optoelectronic components. For example, gallium nitride can be used in laser diodes of violet light. It can be used without using a nonlinear Diode-pumped solid-state laser. Generates violet light (405nm) laser.

2023-04-20

SiC MOS

Silicon carbide (SiC) MOSFET is a kind of high speed, high efficiency, low power semiconductor device, widely used in high voltage, high temperature, high power electronics field. Compared with traditional Si mosFeTs, SiC MosFeTs have higher breakdown field strength, better resistance to high pressure, and higher switching speed, while having better high-temperature stability and lower turn-off loss.

2023-04-20

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