
Breakthrough Performance
The Inmark’s MOT1145G synchronous rectifier NMOS utilizes advanced trench technology, boasting a 100V withstand voltage and an ultra-low on-resistance of 4.4mΩ, with a current carrying capacity of up to 90A. These groundbreaking parameters distinguish from other products in its class, so as to provide a solid guarantee for high power density designs.

Enabling Miniaturized Design
In 65W GaN fast charging solutions, the MOT1145G's outstanding performances are mainly in:
Extreme Efficiency: A low on-resistance of 4.4mΩ significantly reduces switching losses, to result in a significant improvement in overall efficiency.
Excellent Heat Dissipation: Optimized thermal design allows the device to maintain low operating temperatures even under full load.
Space Saving: The compact package size perfectly meets the requirements of high power density designs.

Technological Advantages Stand Out
Compared to traditional solutions, the 65W GaN fast charging solution based on MOT1145G achieves multiple breakthroughs:
- Power density increased by approximately 40%, while size is reduced to 50% of traditional chargers.
- System efficiency reach over 94%, with significantly reduced heat generation.
- Supports multiple fast charging protocols, offering broad compatibility.
Market Application Prospects
Currently, this solution has achieved large-scale mass production, and is widely used in:
- Multi-port GaN fast chargers
- Slim and lightweight laptop power adapters
- Power banks and in-vehicle charging devices
- Fast charging accessories for various smart devices

Inmark’s successful deployment of the MOT1145G in the field of gallium nitride fast charging demonstrates its profound technological accumulation in the power semiconductor field. In the future, as the fast charging technology develops towards higher power and smaller size, Inmark will continue to dedicate itself to technological innovation to provide consumers with a more efficient and portable charging experience.




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